| 摘要 |
PROBLEM TO BE SOLVED: To provide a high electron mobility transistor which can increase the carrier density without making the thickness of a barrier layer very thin, and a manufacturing method for the same.SOLUTION: There is provided a high electron mobility transistor 1 which comprises a buffer layer 12 which is laminated on a substrate 11, a channel layer 13 which is laminated on the buffer layer 12, a barrier layer 14 which is laminated on the channel layer 13, and a source 21, a drain 22, and a gate 23 which are electrodes formed on the barrier layer 14, and in which the channel layer 13 and the barrier layer 14 are joined in heterojunction, an insulation film 15 is laminated on the barrier layer 14 including the source 21, the drain 22 and the gate 23, and after the insulation film 15 is laminated, the insulation film 15 is made into the shrunk state compared to the lamination time by being subjected to a prescribed heat treatment.SELECTED DRAWING: Figure 3 |
