| 发明名称 |
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and an epitaxial layer formed on the main surface. The silicon carbide semiconductor substrate has an amount of warpage of not less than −100 μm and not more than 100 μm when a substrate temperature is a room temperature and has an amount of warpage of not less than −1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C. |
| 申请公布号 |
US2016181375(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201414910182 |
申请日期 |
2014.06.13 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HORII Taku;KUBOTA Ryosuke;MASUDA Takeyoshi |
| 分类号 |
H01L29/16;H01L21/311;H01L21/3065;H01L21/306;H01L21/02;H01L21/04 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon carbide semiconductor substrate comprising:
a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and an epitaxial layer formed on said main surface, said silicon carbide semiconductor substrate having an amount of warpage of not less than −100 μm and not more than 100 μm when a substrate temperature is a room temperature and having an amount of warpage of not less than −1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C. |
| 地址 |
Osaka-shi JP |
