3D Packages and Methods for Forming the Same

摘要

Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a first passivation layer over a first substrate; forming an interconnecting structure over the first passivation layer, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of thin film dielectric layers; bonding a die to a first side of the interconnecting structure; etching the first substrate from a second side of the interconnecting structure to expose the first passivation layer; and forming a first connector on and extending through the first passivation layer, the first connector coupled to at least one of the plurality of metal layers.