MANUFACTURING METHOD OF THIN FILM TRANSISTOR OF DISPLAY DEVICE

摘要

A manufacturing method of a thin film transistor of a display device, the method including forming a gate insulating layer on a semiconductor layer; attaching a halftone mask onto the gate insulating layer; forming a channel region including a plurality of bridged grain lines formed; exposing the gate insulating layer of the channel region; forming a gate electrode layer on the halftone mask and the gate insulating layer; forming a gate electrode on the channel region by etching a portion corresponding to a boundary of the channel region of the gate electrode layer; removing the halftone mask; forming source/drain regions; forming an interlayer insulating layer on the gate electrode and the gate insulating layer; forming contact holes by etching the gate insulating layer and the interlayer insulating layer to expose the source/drain regions; and forming source/drain electrodes connected with the source/drain regions through the contact holes.

主权项

1. A manufacturing method of a thin film transistor of a display device, the method comprising:
forming a gate insulating layer on a semiconductor layer including a polysilicon layer; attaching a halftone mask formed using a photoresist onto the gate insulating layer; forming a channel region including a plurality of bridged grain lines formed by doping impurities on the semiconductor layer; exposing the gate insulating layer of the channel region by etching a part of the halftone mask; forming a gate electrode layer on the halftone mask and the gate insulating layer; forming a gate electrode on the channel region by etching a portion corresponding to a boundary of the channel region of the gate electrode layer; removing the halftone mask; forming source/drain regions by doping impurities on both sides of the channel region of the semiconductor layer; forming an interlayer insulating layer on the gate electrode and the gate insulating layer; forming contact holes by etching the gate insulating layer and the interlayer insulating layer to expose the source/drain regions; and forming source/drain electrodes connected with the source/drain regions through the contact holes.