发明名称 METHOD OF ANALYZING 2-DIMENSIONAL MATERIAL GROWTH
摘要 Disclosed is a method of analyzing the growth of graphene. The disclosed method includes the following steps: forming a two-dimensional material (2D) on a substrate; depositing a material for detecting defects (for denoting defects) on the defects of the 2D material ; and obtaining an image of the 2D material on which the detection material is deposited, or map coordinates of the detection material and processing the obtained image or map coordinates. In this case, the detection material may be deposited on the 2D material defect through an atomic layer deposition (ALD) scheme, a chemical vapor deposition (CVD) scheme. The detection material may include an inorganic material or an organic material. The detection material layers may include one of a metal, a semiconductor, and a dielectric substance. The dielectric substance may be an oxide. The image of the 2D material on which the detection material is deposited may be obtained through TEM, SEM, CD-SEM or OM.
申请公布号 KR20160062568(A) 申请公布日期 2016.06.02
申请号 KR20140165501 申请日期 2014.11.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, SEONG JUN;LEE, JAE HO;PARK, SEONG JUN
分类号 G01N33/00;C23C14/06;C23C16/06;C23C16/22;G01N21/95;G01N23/225;G02B21/00;G06T1/00;H01J37/26 主分类号 G01N33/00
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