METHOD OF FABRICATING STACKED FILM

摘要

The present invention relates to a fabricating method of a stacked film which reduces particle occurrence and a manufacturing cost, and comprises the steps of: sequentially forming a nitride film and an oxide film on a substrate located in a chamber through an in-situ process; prior to forming the oxide film after forming the nitride film, performing a first plasma process under a first atmosphere containing O_2 in the chamber; and after forming the oxide film, performing a second plasma process under a second atmosphere containing O_2 in the chamber. The method performs a cycle of the above-mentioned steps at least one time. The nitride film forming step comprises a step of providing a first source gas containing carbon (C) onto the substrate. The oxide film forming step comprises a step of providing a second source gas containing carbon (C) onto the substrate.