| 摘要 |
PROBLEM TO BE SOLVED: To improve a trade-off relationship between a channel length and a punch-through voltage.SOLUTION: Provided is a semiconductor device having a semiconductor substrate on whose surface a trench is formed, and a gate insulating layer and a gate electrode in the trench. A step is formed on a lateral face of the trench. The lateral face of the trench has an upper lateral face, a surface of the step, and a lower lateral face. The semiconductor substrate has: a first region of a first conductivity type contacted with the gate insulating layer at the upper lateral face; a body region of a second conductivity type arranged striding over from a position contacted with the first region to a position lower than the step, and contacted with the gate insulating layer at the upper lateral face at a lower side in the first region; a second region of the first conductivity type arranged at a lower side in the body region, and contacted with the gate insulating layer at the lower lateral face; and a side region of the first conductivity type contacted with the gate insulating layer at the surface of the step, and connected with the second region.SELECTED DRAWING: Figure 1 |
