TOPOLOGICAL METHOD TO BUILD SELF-ALIGNED MTJ WITHOUT A MASK

摘要

A method of forming a self-aligned MTJ without using a photolithography mask and the resulting device are provided. Embodiments include forming a first electrode over a metal layer, the metal layer recessed in a low-k dielectric layer; forming a MTJ layer over the first electrode; forming a second electrode over the MTJ layer; removing portions of the second electrode, the MTJ layer, and the first electrode down to the low-k dielectric layer; forming a silicon nitride-based layer over the second electrode and the low-k dielectric layer; and planarizing the silicon nitride-based layer down to the second electrode.

主权项

1. A device comprising:
a low-k dielectric layer; a metal layer recessed in the low-k dielectric layer; a first electrode formed on the metal layer; a self-aligned magnetic tunnel junction (MTJ) formed on the first electrode; a second electrode formed on the MTJ; and a silicon nitride-based layer formed on the low-k dielectric substrate and adjacent to an outer edge of the first electrode, the MTJ, and the second electrode.