ANTI-FUSE TYPE ONE-TIME PROGRAMMABLE MEMORY CELL ARRAY AND METHOD OF OPERATING THE SAME

摘要

An anti-fuse type one-time programmable (OTP) memory cell array includes a plurality of unit cells which are respectively located at cross points of a plurality of rows and a plurality of columns, a well region shared by the plurality of unit cells, a plurality of anti-fuse gates respectively disposed in the plurality of columns to intersect the well region, a plurality of source/drain regions respectively disposed in portions of the well region between the plurality of anti-fuse gates, and a plurality of drain regions respectively disposed in portions of the well region located at one sides of the anti-fuse gates arrayed in a last column, which are opposite to the anti-fuse gates arrayed in a first column. Each of the unit cells includes one anti-fuse transistor having a MOS transistor structure without a selection transistor.

主权项

1. An anti-fuse type one-time programmable (OTP) memory cell array including a plurality of unit cells which are respectively located at cross points of a plurality of rows and a plurality of columns, the anti-fuse type OTP memory cell array comprising:
a plurality of well regions respectively disposed in the plurality of rows; a plurality of anti-fuse gates respectively disposed in the plurality of columns to intersect the plurality of well regions; a plurality of source/drain regions respectively disposed in portions of the well regions between the plurality of anti-fuse gates; and a plurality of drain regions respectively disposed in the well regions located at one side of a last anti-fuse gate disposed in a last column, which is opposite to a first anti-fuse gate disposed in a first column, wherein each of the unit cells includes one anti-fuse transistor having a metal-oxide-semiconductor (MOS) transistor structure without a selection transistor.