High-frequency power amplifier and method for manufacturing the same

摘要

A high-frequency power amplifier includes: a semiconductor substrate; transistor cells separated from each other and located on the semiconductor substrate; and testing electrodes respectively connected to individual transistor cells, wherein an electrical signal and power to individually operate each corresponding transistor cell are supplied to each transistor cell, independently, from outside, using the testing electrodes.

主权项

1. A high-frequency power amplifier comprising:
a semiconductor substrate; a plurality of transistor cells separated from each other and located on the semiconductor substrate; and a plurality of testing electrodes located on the semiconductor substrate, wherein respective testing electrodes of the plurality of testing electrodes are only connected to respective corresponding transistor cells of the plurality of transistor cells so that an electrical signal and power for operating each respective corresponding transistor cell can be supplied to each respective corresponding transistor cell individually, from outside the respective corresponding transistor cell, using the testing electrode connected to the respective corresponding transistor cell, without applying the electrical signal and power to any other transistor cell of the plurality of transistor cells.