发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, WAFER WITH SEMICONDUCTOR ELEMENT LAMINATE, SEMICONDUCTOR ELEMENT LAMINATE AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which achieves excellent workability and excellent connectivity even when a thinned wafer is used.SOLUTION: A semiconductor device manufacturing method comprises: a resin composition layer formation process (S2) of forming a resin composition layer on a surface of a first semiconductor wafer which is fixed to a support medium and has a conductor, in which the surface is on the side opposite to the support medium; a conductor exposure process (S3) of performing exposure and developing on the resin composition layer to expose the conductor; an adhesive tape attachment process (S4) of attaching an adhesive tape on the surface of the first semiconductor wafer on the side opposite to the support medium; a support medium separation process (S5) of separating the support medium from the first semiconductor wafer; a dicing process (S6) of dicing the first semiconductor wafer to obtain semiconductor chips with resin composition; an adhesive tape separation process (S7) of separating the semiconductor chips with resin composition from the adhesive tape; and a connection process (S8) of connecting the semiconductor chips with resin composition to a connection member for connecting the semiconductor chips with resin composition.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016082018(A) |
申请公布日期 |
2016.05.16 |
申请号 |
JP20140210662 |
申请日期 |
2014.10.15 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
MITSUKURA KAZUYUKI;ZEISHO RYOTA;RAI HANAKO;MINEGISHI TOMONORI |
分类号 |
H01L21/60;H01L21/301;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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