发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, WAFER WITH SEMICONDUCTOR ELEMENT LAMINATE, SEMICONDUCTOR ELEMENT LAMINATE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which achieves excellent workability and excellent connectivity even when a thinned wafer is used.SOLUTION: A semiconductor device manufacturing method comprises: a resin composition layer formation process (S2) of forming a resin composition layer on a surface of a first semiconductor wafer which is fixed to a support medium and has a conductor, in which the surface is on the side opposite to the support medium; a conductor exposure process (S3) of performing exposure and developing on the resin composition layer to expose the conductor; an adhesive tape attachment process (S4) of attaching an adhesive tape on the surface of the first semiconductor wafer on the side opposite to the support medium; a support medium separation process (S5) of separating the support medium from the first semiconductor wafer; a dicing process (S6) of dicing the first semiconductor wafer to obtain semiconductor chips with resin composition; an adhesive tape separation process (S7) of separating the semiconductor chips with resin composition from the adhesive tape; and a connection process (S8) of connecting the semiconductor chips with resin composition to a connection member for connecting the semiconductor chips with resin composition.SELECTED DRAWING: Figure 1
申请公布号 JP2016082018(A) 申请公布日期 2016.05.16
申请号 JP20140210662 申请日期 2014.10.15
申请人 HITACHI CHEMICAL CO LTD 发明人 MITSUKURA KAZUYUKI;ZEISHO RYOTA;RAI HANAKO;MINEGISHI TOMONORI
分类号 H01L21/60;H01L21/301;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
代理机构 代理人
主权项
地址