发明名称 Processing System Containing An Isolation Region separating a Deposition chamber from a treatment chamber
摘要 An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.
申请公布号 US2016133489(A1) 申请公布日期 2016.05.12
申请号 US201514589990 申请日期 2015.01.05
申请人 APPLIED MATERIALS, INC. 发明人 JANAKIRAMAN Karthik;MALLICK Abhijit Basu;PONNEKANTI Hari K.;SRIRAM Mandyam;DEMOS Alexandros T.;SRINIVASAN Mukund;ROCHA-ALVAREZ Juan Carlos;DUBOIS Dale R.
分类号 H01L21/67;C23C16/458;H01L21/687;C23C14/58;C23C14/50;B05C13/00;C23C16/56 主分类号 H01L21/67
代理机构 代理人
主权项 1. A processing system, comprising: a deposition chamber, wherein the deposition chamber is configured to deposit a film on a substrate; a treatment chamber, wherein the treatment chamber is arranged to receive substrates from the deposition chamber and pass substrates away from the deposition chamber, the treatment chamber further comprising: a film property altering device operable to treat the substrate disposed in the treatment chamber to alter the property of the film deposited in the deposition chamber; and at least one isolation region, wherein the isolation region is configured to separate the deposition chamber from the treatment chamber.
地址 Santa Clara CA US