发明名称 |
Precursors for silicon dioxide gap fill |
摘要 |
A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material. |
申请公布号 |
US9337054(B2) |
申请公布日期 |
2016.05.10 |
申请号 |
US200812665929 |
申请日期 |
2008.06.27 |
申请人 |
ENTEGRIS, INC. |
发明人 |
Hunks William;Xu Chongying;Hendrix Bryan C.;Roeder Jeffrey F.;Bilodeau Steven M.;Li Weimin |
分类号 |
H01L21/316;H01L21/02 |
主分类号 |
H01L21/316 |
代理机构 |
Hultquist, PLLC |
代理人 |
Hultquist, PLLC ;Grant Mary B.;Chappuis Maggie |
主权项 |
1. A precursor composition, comprising:
a germanium precursor; a silicon precursor; alcohol; and an oxidant. |
地址 |
Billerica MA US |