| 摘要 |
PROBLEM TO BE SOLVED: To provide an alternative to the methods of the prior art in order to dope a semiconductor, in particular for the purpose of fabricating p-n junctions.SOLUTION: A method for doping a GaN-base semiconductor in order to fabricate a p-n junction includes a first step consisting of providing a substrate (1) including a GaN-base semiconductor material layer (1b) covered by a silicon-base mask (3). The method includes a second step of performing implantation of impurities (2) in the mask (3) so as to transfer additional dopant impurities (4) of Si type by diffusion from the mask (3) to the semiconductor material layer (1b) to form an n-type region adjacent to a p-type region. Configured heat treatment is then performed to activate the dopant impurities (2) and the additional dopant impurities (4).SELECTED DRAWING: Figure 5 |
