发明名称 |
ELECTRONIC DEVICE, METHOD FOR MANUFACTURING THE SAME, AND DEVICE FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide an electronic device capable of preventing deterioration in performance.SOLUTION: A TFT 21 comprises a channel 14 composed of an IGZO film, an etch stop film 22 adjacent to the channel 14, and a passivation film 23 facing the channel 14 across the etch stop film 22. The passivation film 23 is composed of a fluorine-containing silicon nitride film. The concentration of fluorine atoms in the boundaries of the etch stop film 22 and the channel 14 is higher than the concentration of fluorine atoms in portions other than the boundary of the channel 14. The concentration distribution of fluorine atoms in portions other than the boundary of the etch stop film 22 has a concentration gradient which decreases toward the boundary.SELECTED DRAWING: Figure 6 |
申请公布号 |
JP2016072570(A) |
申请公布日期 |
2016.05.09 |
申请号 |
JP20140203379 |
申请日期 |
2014.10.01 |
申请人 |
TOKYO ELECTRON LTD;KOCHI PREFECTURAL PUBLIC UNIVERSITY CORP |
发明人 |
SATOYOSHI TSUTOMU;ISHIDA HIROSHI;SASAKI KAZUO;FURUTA MAMORU |
分类号 |
H01L21/336;H01L21/316;H01L21/318;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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