| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces a breakdown voltage and achieves ESD protection.SOLUTION: A semiconductor device according to an embodiment comprises: a first semiconductor region; a second semiconductor region; a third semiconductor region that is provided between the first semiconductor region and the second semiconductor region, has a bottom part in contact with the first semiconductor region and a part of an upper part opposite to the bottom part in contact with the second semiconductor region, and has an impurity concentration higher than that of the second semiconductor region; a fourth semiconductor region that is selectively provided on a surface of the second semiconductor region opposite to the first semiconductor region, and sandwiches a part of the second semiconductor region together with the third semiconductor region; an insulating layer that is provided on the second semiconductor region and on the fourth semiconductor region, is provided with a first opening for opening a part of an upper surface of the fourth semiconductor region, and has a ratio of an area of the part to an area of the upper surface that is not less than 10% and not greater than 90%; and a wiring layer that is provided on the insulating layer, and is connected with the fourth semiconductor region via the first opening.SELECTED DRAWING: Figure 1 |
