| 摘要 |
PROBLEM TO BE SOLVED: To inhibit deterioration of the etching accuracy when a single crystal substrate made into a passage substrate is polished and then anisotropic etching is performed to a polishing surface of the substrate, and to secure good adhesiveness between the etched polishing surface and another passage member.SOLUTION: An altered layer 60 generated on a polishing surface 61 of a silicon single crystal substrate 70, which is made into a passage substrate 20, is removed by using a removal medium containing fluorine. The altered layer 60 in an area A1, in which a pressure chamber 26 is formed, of the polishing surface 61 of the silicon single crystal substrate 70 is removed. However, the altered layer 60 in an area A2 joined to a nozzle plate 21 is left.SELECTED DRAWING: Figure 7 |
