发明名称 |
METHODS OF FORMING AN IMPROVED VIA TO CONTACT INTERFACE BY SELECTIVE FORMATION OF A METAL SILICIDE CAPPING LAYER |
摘要 |
One illustrative method disclosed herein includes, among other things, forming an opening in at least one layer of insulating material so as to thereby expose at least a portion of a conductive contact, performing a selective metal silicide formation process to selectively form a metal silicide layer in the opening and on the conductive contact, depositing at least one conductive material above the selectively formed metal silicide layer so as to over-fill the opening, and performing at least one planarization process so as to remove excess materials and thereby define a conductive via that is positioned in the opening and conductively coupled to the selectively formed metal silicide layer and to the conductive contact. |
申请公布号 |
US2016126135(A1) |
申请公布日期 |
2016.05.05 |
申请号 |
US201414526729 |
申请日期 |
2014.10.29 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Zhang Xunyuan;Bolom Tibor;Ryan Errol Todd |
分类号 |
H01L21/768;H01L23/532;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
forming an opening in at least one layer of insulating material positioned above a conductive contact that is conductively coupled to a transistor device so as to thereby expose at least a portion of said conductive contact; performing a selective metal silicide formation process to selectively form a metal silicide layer in said opening and on said conductive contact, wherein performing said selective metal silicide formation process comprises generating a plasma environment at at temperature of 400° C. or less and introducing a silicon-containing precursor gas into said plasma environment, depositing at least one conductive material above said selectively formed metal silicide layer so as to over-fill said opening; and performing at least one planarization process so as to remove excess materials positioned outside of said opening and thereby define a conductive via that is positioned in said opening and conductively coupled to said selectively formed metal silicide layer and to said conductive contact. |
地址 |
Grand Cayman KY |