SUBSTRATE WITH SILICON CARBIDE FILM, METHOD FOR PRODUCING SUBSTRATE WITH SILICON CARBIDE FILM, AND SEMICONDUCTOR DEVICE

摘要

A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film provided on the upper side of the Si substrate and a second SiC film provided on the upper side of the first SiC film. The mask has a first mask provided on the Si substrate and including an opening (first opening) and a second mask provided on the first SiC film and including an opening (second opening). The width W1 (μm) of the first opening and the thickness T1 (μm) of the first mask satisfy the following relationship: T1

主权项

1. A substrate with a silicon carbide film, comprising:
a silicon substrate; and a cubic silicon carbide film and a mask stacked on the silicon substrate, wherein the cubic silicon carbide film has a first cubic silicon carbide film provided on the upper side of the silicon substrate and a second cubic silicon carbide film provided on the upper side of the first cubic silicon carbide film, the mask has a first mask provided between the silicon substrate and the first cubic silicon carbide film and a second mask provided between the first cubic silicon carbide film and the second cubic silicon carbide film, the first mask includes a first opening, and the silicon substrate is exposed from the first opening, the second mask includes a second opening, and the first cubic silicon carbide film is exposed from the second opening, and when the width of the first opening is represented by W1 (μm) and the thickness of the first mask is represented by T1 (μm), the following relationship is satisfied: T1