Electronic device having buried gate and method for fabricating the same

摘要

Electronic devices having semiconductor elements and methods for fabricating such devices including, a method for fabricating an electronic device including a semiconductor memory, which includes: forming a sacrificial layer on a substrate including a first region and a second region; selectively etching the sacrificial layer and the substrate of the first region to form a trench; forming a first gate that fills a part of the trench in the first region; forming a gate protection layer on the first gate to fill the remaining part of the trench; removing the sacrificial layer of the first region to form a grooved portion surrounded by the gate protection layer; forming a conductive plug to cover the grooved portion; removing the sacrificial layer of the second region; and forming a second gate on the substrate of the second region.

主权项

1. An electronic device including a semiconductor memory, wherein the semiconductor memory comprises:
a substrate including a first region and a second region; a stacked structure of a first gate and a gate protection layer that are formed in the first region such that a part of the stacked structure is buried in the substrate, wherein a sidewall of the first gate is aligned with a sidewall of the gate protection layer; a conductive plug disposed on the substrate of the first region and in at a side of the stack structure; and a second gate disposed on the substrate of the second region.