MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

摘要

Disclosed is a memory device which is capable of being repaired permanently and impermanently. The memory device may comprise: an address latch circuit which latches an address received from the outside of the memory device; a repair signal generation circuit which generates a soft repair signal; a selection information generation circuit which generates first selection information using first bits of the address latched in the address latch circuit; first to N^th register circuits, wherein second bits of the address latched in the address latch circuit are stored as repair data in a circuit selected among the first to N^th register circuits by the first selection information when the soft repair signal is enabled; and first to N^th memory blocks each of which is repaired using repair data stored in each of the first to N^th register circuits.