CORNER LAYOUT FOR HIGH VOLTAGE SEMICONDUCTOR DEVICES

摘要

A corner layout for a semiconductor device that maximizes the breakdown voltage is disclosed. The device includes first and second subsets of the striped cell arrays. The ends of each striped cell in the first array is spaced a uniform distance from the nearest termination device structure. In the second subset, the ends of striped cells proximate a corner of the active cell region are configured to maximize breakdown voltage by spacing the ends of each striped cell a non-uniform distance from the nearest termination device structure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

主权项

1. A semiconductor device comprising:
a doped layer; an active cell region having a plurality of active cell device structures having a first end and a second end formed in the doped layer and arranged in striped cell arrays; and a termination region having a plurality of termination device structures formed in the doped layer surrounding the active cell region, wherein the termination device structures include one or more termination ring arrays, wherein an innermost ring array of termination device structures has a plurality of spurs extending inward towards active cell region and wherein a distance between each of the spurs and a nearby striped cell is configured to maximize the breakdown voltage of the device
wherein a first subset of the striped cells are configured to maximize a breakdown voltage of the semiconductor device by having the ends of each striped cell in the first subset spaced a uniform distance from the nearest termination device structure; andwherein a second subset of the striped cells proximate to a corner region of the active cell region are configured to maximize the breakdown voltage by spacing the ends of each striped cell in the second subset a non-uniform distance from a nearest termination device structure.