| 发明名称 |
SUBMOUNT AND MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method. |
| 申请公布号 |
US2016118767(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201514920134 |
申请日期 |
2015.10.22 |
| 申请人 |
NICHIA CORPORATION |
发明人 |
YONEDA Akinori;SONOBE Shinya;YUTO Hiroaki |
| 分类号 |
H01S5/022;H05K1/09;H05K3/18;H05K3/06;C23C14/18;C25D3/38;C25D7/12;C25D5/02;C23C14/34;H05K1/03;H05K3/16 |
主分类号 |
H01S5/022 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a submount, comprising:
preparing a single crystal SiC including an upper surface and a lower surface and provided with a micropipe penetrating from the upper surface to the lower surface; forming a first seed layer made of a metal material on the upper surface of the single crystal SiC; and forming a first plated layer on the first seed layer so as to close an upper end of the micropipe, using an electroplating method. |
| 地址 |
Anan-shi JP |
