| 摘要 |
A field-effect transistor having a specific top-gate bottom-contact structure, the field-effect transistor containing as organic semiconductor materials a compound represented by the formula (1) and a compound represented by the formula (2):
wherein R 1 and R 2 independently represent an unsubstituted or halogen-substituted C1-C36 aliphatic hydrocarbon group; and
wherein Ar 1 , Ar 2 and Ar 3 independently represent a substituted or unsubstituted aromatic hydrocarbon group, and n is an integer of 6 or greater. |
