Silicon carbide semiconductor device

摘要

A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer of a first conductivity type; a field insulating film formed on a surface of the silicon carbide semiconductor layer; a Schottky electrode formed on the surface of the silicon carbide semiconductor layer on an inner periphery side relative to the field insulating film, the Schottky electrode being formed to overlap onto the field insulating film; a front-surface electrode that covers the Schottky electrode and extends on the field insulating film beyond a peripheral edge of the Schottky electrode; and a terminal well region of a second conductivity type that is formed to be in contact with a part of the Schottky electrode in an upper part of the silicon carbide semiconductor layer and extends in the silicon carbide semiconductor layer on an outer periphery side relative to a peripheral edge of the front-surface electrode.

主权项

1. A silicon carbide semiconductor device comprising:
a silicon carbide semiconductor layer of a first conductivity type; a field insulating film formed on a surface of said silicon carbide semiconductor layer; a Schottky electrode formed on the surface of said silicon carbide semiconductor layer on an inner periphery side relative to said field insulating film, a peripheral edge of said Schottky electrode being formed to overlap onto said field insulating film; a front-surface electrode that covers said Schottky electrode and extends on said field insulating film beyond the peripheral edge of said Schottky electrode; a terminal well region of a second conductivity type that is formed to be in contact with a part of said Schottky electrode in an upper part of said silicon carbide semiconductor layer and extends in said silicon carbide semiconductor layer on an outer periphery side relative to a peripheral edge of said front-surface electrode; and a high-concentration terminal well region of the second conductivity type that is formed in said terminal well region and has a second-conductivity-type impurity concentration higher than that of said terminal well region, wherein the peripheral edge of said front-surface electrode is located at a distance of 15 μm or more inward from a peripheral edge of said terminal well region.