| 摘要 |
An electrostatic discharge (ESD) protection circuit may include an n-channel metal oxide semiconductor (NMOS) having a drain connected to a power terminal and a source and a gate connected to a ground terminal, a capacitor connected to the drain and a bulk terminal of the NMOS in parallel, and a plurality of series-connected diodes having anodes of one ends thereof connected to the bulk terminal and cathodes of the other ends thereof connected to the ground terminal. |
