SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, GAS SUPPLY UNIT, CARTRIDGE HEAD, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To suitably perform process processing on a substrate when various gases are supplied upward and discharged upward.SOLUTION: A substrate processing device comprises: a substrate placement table where a substrate is placed; a processing gas supply which supplies a processing gas onto a surface of the substrate from an upper side of the substrate placement table; an inert gas supply unit which supplies an inert gas onto the surface of the substrate by the gas supply unit from an upper side of the substrate placement table; and a gas discharge part which has a gas exhaust hole arranged between the gas supply unit and inert gas supply unit opposite the substrate placement table and an exhaust buffer chamber as a space where a gas having passed through the gas exhaust hole stagnate, and exhaust the gas supplied onto the surface of the substrate to above the substrate through the gas exhaust hole and exhaust buffer chamber, thus constituting a substrate processing device.SELECTED DRAWING: Figure 3