发明名称 METHOD AND APPARATUS FOR CHARACTERIZING METAL OXIDE REDUCTION
摘要 Method and apparatus for characterizing metal oxide reduction using metal oxide films formed by exposure to an oxygen plasma are disclosed. A substrate including a metal seed layer is exposed to the oxygen plasma to form a metal oxide of the metal seed layer, where the exposure can take place at a low temperature and low pressure. Oxidized substrates formed in this manner provide metal oxides that are repeatable, uniform, and stable. The oxidized substrates can be stored for later use or exposed to a reducing treatment to the metal oxide to metal. In some implementations, exposure to the reducing treatment includes exposure to plasma of a reducing gas species, where the plasma of the reducing gas species and the oxygen plasma can both be produced in a remote plasma source.
申请公布号 US2016111342(A1) 申请公布日期 2016.04.21
申请号 US201514884504 申请日期 2015.10.15
申请人 Lam Research Corporation 发明人 Huang Ludan;Lyons Richard K.;Ghonghadi Shantinath;Spurlin Tighe A.;Opocensky Edward C.
分类号 H01L21/66;G01N27/04;H01J37/32;C23C16/50;C23C16/458;H01L21/02;C23C16/52 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method of characterizing metal oxide reduction, the method comprising: (a) providing a substrate with a metal seed layer formed thereon in a processing chamber; (b) generating an oxygen plasma; (c) exposing the substrate to the oxygen plasma in the processing chamber to form a metal oxide of the metal seed layer, wherein a temperature of the substrate is below an agglomeration temperature of the metal seed layer; and (d) exposing the substrate to a reducing treatment under conditions that reduce the metal oxide to metal in the form of a film integrated with the metal seed layer.
地址 Fremont CA US
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