T-SHAPED FIN ISOLATION REGION AND METHODS OF FABRICATION

摘要

Semiconductor devices and fabrication methods are provided having an isolation feature within a fin structure which, for instance, facilitates isolating circuit elements supported by the fin structure. The fabrication method includes, for instance, providing an isolation material disposed, in part, within the fin structure, the isolation material being formed to include a T-shaped isolation region and a first portion extending into the fin structure, and a second portion disposed over the first portion and extending above the fin structure.

主权项

1. A method comprising:
providing an isolation feature within a fin structure extending above a substrate, the providing comprising:
providing an isolation material disposed, in part, within the fin structure, the isolation material being formed to include a T-shaped isolation region and comprise a first portion extending into the fin structure, and a second portion disposed over the first portion and extending above the fin structure; andwherein providing the isolation material includes disposing the isolation material within and adjacent to at least one sidewall of the fin structure, and wherein the method further comprises providing a layer of masking material over the isolation material, and selectively etching through the layer of masking material to define a protective mask, the protective mask facilitating defining the second portion of the T-shaped isolation region.