| 发明名称 | Semiconductor device metallization systems and methods | ||
| 摘要 | Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module. | ||
| 申请公布号 | US9318364(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201414153738 | 申请日期 | 2014.01.13 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lee Hsiang-Huan;Shue Shau-Lin;Koai Keith Kuang-Kuo;Chen Hai-Ching;Tseng Tung-Ching;Yang Wen-Cheng;Kao Chung-En;Lee Ming-Han;Huang Hsin-Yen |
| 分类号 | H01L21/31;H01L21/677;H01L21/02;H01L21/306;H01L21/768;H01L21/67 | 主分类号 | H01L21/31 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of processing a semiconductor device, the method comprising: placing in a metallization system a workpiece having formed thereon a low-k dielectric layer, the metallization system including a mainframe and a plurality of modules disposed proximate the mainframe, wherein one of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module; at least partially curing the low-k dielectric layer in the UV cure module; depositing a layer on the low-k dielectric layer in the PVD module after at least partially curing the low-k dielectric layer; and curing the low-k dielectric layer in the UV cure module after depositing the layer. | ||
| 地址 | Hsin-Chu TW | ||