| 发明名称 | Voltage regulator for a flash memory | ||
| 摘要 | The invention provides a voltage regulator. The voltage regulator (100) of the invention includes a comparison circuit (20) and a voltage divider circuit (110). The voltage divider circuit (110) has a PMOS transistor (T6) connected to a voltage source (VDD) and resistors (R1, R2, R3, R4, R5 and R6) serially connected between the transistor (T6) and a reference voltage. A feedback voltage generated from a node (N3) between resistors R4 and R5 is provided to the comparison circuit (20). In addition, a middle voltage (Vm) generated from a node (Nc) of the resistors is provided to a well region, so the parasitic capacitance is reduced. | ||
| 申请公布号 | US9317053(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201414263536 | 申请日期 | 2014.04.28 |
| 申请人 | WINBOND ELECTRONICS CORP. | 发明人 | Yano Masaru;Murakami Hiroki |
| 分类号 | H01L29/8605;H01L27/08;G05F1/575;H01L49/02 | 主分类号 | H01L29/8605 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor substrate, having a semiconductor region; and a resistor, consisting of a conductive material formed via an insulation film on the semiconductor region, wherein the resistor is supplied with a first voltage and a second voltage of a reference voltage, the semiconductor region is supplied a middle voltage between the first voltage and the second voltage, and the middle voltage is generated by the resistor. | ||
| 地址 | Taichung TW | ||