Method of manufacturing three-dimensional semiconductor device and variable resistive memory device

摘要

A three-dimensional semiconductor device, a resistive variable memory device including the same, and a method of manufacturing the same are provided. The method may include forming a source on a semiconductor substrate, sequentially forming a first semiconductor layer formed of a first material, a second semiconductor layer formed of a second material having a higher oxidation rate than that of the first material, and a third semiconductor layer formed of the first material on the source; patterning the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer; forming a lightly doped drain (LDD) region in the second semiconductor layer and a drain in the third semiconductor layer; oxidizing outer circumferences of the first semiconductor layer, the LDD region and the drain region to form a gate insulating layer; forming a gate on an outer circumference of the gate insulating layer to overlap the first semiconductor layer and a portion of the LDD region; foaming a heating electrode on the drain; and forming a variable resistance layer on the heating electrode.

主权项

1. A method of manufacturing a three-dimensional (3D) semiconductor device, the method comprising:
forming a source on a semiconductor substrate; sequentially forming a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer, on the source; patterning the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer to form an active pillar; oxidizing an outer circumference of the active pillar to form a gate insulating layer; and forming a gate on an outer circumference of the gate insulating layer, wherein the second semiconductor layer is formed of a material having a higher oxidation rate than those of the first semiconductor layer and the third semiconductor layer.