发明名称 MICROWAVE DEVICE, HIGH FREQUENCY DEVICE AND HIGH FREQUENCY APPARATUS
摘要 Since the loss of the conventional microwave device is large, when this device is applied to the microwave component, there are problems; for example, a low-noise amplifier, the noise figure is degraded, and when applied to a high-output amplifier, output and efficiency may be decreased. In particular, in the high-output amplifier of over 100 W class, heat generation at a capacitor which forms the microwave device increases, which causes a problem that the reliability of the microwave device may be decreased. A structure is formed to include a capacitor loaded between two high impedance lines the length of which has 1/4 wavelength in the desired frequency band and the characteristic impedance is higher than 50 ©.
申请公布号 EP2117070(B1) 申请公布日期 2016.04.13
申请号 EP20080704134 申请日期 2008.01.30
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 SEINO, KIYOHARU;HUNADA, MASAHIKO
分类号 H01P1/00;H01P5/02;H03F3/60 主分类号 H01P1/00
代理机构 代理人
主权项
地址