发明名称 |
METHOD FOR CHEMICAL-MECHANICAL POLISHING OF A SUBSTRATE |
摘要 |
This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm. <IMAGE> |
申请公布号 |
EP1211717(B1) |
申请公布日期 |
2016.04.13 |
申请号 |
EP20000953466 |
申请日期 |
2000.08.17 |
申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
KURATA, YASUSHI;KAMIGATA, YASUO;UCHIDA, TAKESHI;TERASAKI, HIROKI;IGARASHI, AKIKO |
分类号 |
H01L21/304;H01L21/321;B24B37/00;C09G1/02;C09K3/14;C23F3/06;H01L21/768 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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