发明名称 Management of memory array with magnetic random access memory (MRAM)
摘要 An embodiment of the invention includes a mass storage device with a storage media that includes magnetic random access memory (MRAM) devices with a NAND flash interface and NAND flash memory devices that are coupled to the MRAM devices. The storage media is partitioned into a hybrid reserved area made of a combination of MRAM array NAND array and hybrid user area made of a combination of MRAM array and NAND array and further includes a controller with a host interface and flash interface coupled to the MRAM and NAND flash memory devices through a flash interface.
申请公布号 US9311232(B2) 申请公布日期 2016.04.12
申请号 US201314109914 申请日期 2013.12.17
申请人 Avalanche Technology, Inc. 发明人 Asnaashari Mehdi;Nemazie Siamack
分类号 G11C11/34;G11C16/06;G06F12/02;G06F13/00;G11C11/16;G11C16/22;G06F12/08;G06F3/06;G06F9/00 主分类号 G11C11/34
代理机构 代理人 Imam Maryam;Yen Bing K.
主权项 1. A mass storage device comprising: a storage media having, one or more MRAM devices including a first interface circuit;one or more NAND flash memory devices including a second interface circuit;a hybrid reserved area spanning at least a portion of the one or more NAND flash memory devices and at least a portion of the one or more MRAM devices; anda controller coupled to the storage media, the controller being coupled to the one or more MRAM devices through the first interface circuit and to the one or more NAND flash memory devices through the second interface circuit, wherein the controller uses the hybrid reserved area to store private data.
地址 Fremont CA US