发明名称 Method for the production of metal oxide-containing layers
摘要 The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R′, R″=organic group, X═F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.
申请公布号 US9309595(B2) 申请公布日期 2016.04.12
申请号 US201013390840 申请日期 2010.08.13
申请人 Evonik Degussa GmbH 发明人 Steiger Juergen;Pham Duy Vu;Thiem Heiko;Merkulov Alexey;Hoppe Arne
分类号 C23C18/12 主分类号 C23C18/12
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A process for producing a metal oxide-containing layer, the process comprising applying an anhydrous solution to a substrate, optionally drying a resulting coated substrate and converting a coating formed from said anhydrous solution to form a metal oxide-containing layer, wherein the anhydrous solution comprises: i) a metal oxo alkoxide of formula (I): MxOy(OR)z[O(R′O)cH]aXb[R″OH]d  (I),wherein x=3-25,y=1-10,z=3-50,a=0-25,b=0-20,c=0-1,d=0-25,M=In, Ga, Sn, Zn, or a mixture thereof,R, R′, R″ individually represent an organic radical,X=F, Cl, Br, or I; and ii) a solvent.
地址 Essen DE