Method of forming a semiconductor substrate including a cooling channel

摘要

A semiconductor substrate for use in an integrated circuit, the semiconductor substrate including a channel defined on a surface of the substrate. The channel includes a first wall, a second wall, and a third wall. The first wall is recessed from the surface. The second wall extends from the surface to the first wall. The third wall extends from the surface to the first wall and faces the second wall across the channel. At least one of the second wall and the third wall includes a plurality of structures projecting into the channel from the second wall or the third wall.

主权项

1. A method of forming a semiconductor substrate including a cooling channel, the method comprising:
forming a trench in a surface of a first semiconductor wafer, the trench having a trench width; forming a first slot through a second semiconductor wafer, the first slot having a first slot width, the first slot width less than at least a portion of the trench width; forming a second slot through a third semiconductor wafer, the second slot having a second slot width, the second slot width greater than the first slot width; aligning the second semiconductor wafer to the first semiconductor wafer such that the first slot aligns with the trench; aligning the third semiconductor wafer to the second semiconductor wafer such that the second slot aligns with the first slot; and bonding the first semiconductor wafer, the second semiconductor wafer, and the third semiconductor wafer together to form the semiconductor substrate; wherein the trench, the first slot, and the second slot form walls of the cooling channel and edges of the first slot project into the cooling channel.