发明名称 ESD protection circuit and ESD protection method thereof
摘要 The present invention provides an ESD protection circuit including a discharge transistor, a first switch, a second switch, a third switch and a fourth switch. The discharge transistor forms a discharge path between a first voltage terminal and a second voltage terminal. The first switch selectively provides voltage at the first voltage terminal to a control terminal of the discharge transistor. The second switch selectively provides voltage at the second voltage terminal to the control terminal of the discharge transistor. The third switch selectively provides voltage at the first voltage terminal to a substrate of the discharge transistor. The fourth switch selectively provides voltage at second voltage terminal to the substrate of the discharge transistor.
申请公布号 US9312691(B2) 申请公布日期 2016.04.12
申请号 US201414317166 申请日期 2014.06.27
申请人 SILICON MOTION, INC. 发明人 Chen Te-Wei
分类号 H02H9/04 主分类号 H02H9/04
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. An ESD protection circuit, comprising: a first voltage terminal; a second voltage terminal; a discharge transistor, having a first terminal coupled to the first voltage terminal, a second terminal coupled to the second voltage terminal, a control terminal coupled to a first node, and a substrate coupled to a second node, wherein the discharge transistor forms a discharge path between the first voltage terminal and the second voltage terminal; a first switch, coupled between the first voltage terminal and the first node, arranged to selectively provide voltage at the first voltage terminal to the control terminal of the discharge transistor; a second switch, coupled between the first node and the second voltage terminal, arranged to selectively provide voltage at the second voltage terminal to the control terminal of the discharge transistor; a third switch, coupled between the first voltage terminal and the second node, arranged to selectively provide voltage at the first voltage terminal to the substrate of the discharge transistor; and a fourth switch, coupled between the second node and the second voltage terminal, arranged to selectively provide voltage at the second voltage terminal to the substrate of the discharge transistor.
地址 Jhubei, Hsinchu County TW