SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR-DEVICE PRODUCTION METHOD, AND RECORDING MEDIUM

摘要

[Problem] To provide a technology capable of efficiently removing gas from the inside of a processing chamber. [Solution] This substrate processing device is provided with: a processing chamber for processing substrates; a processing-gas supply system for supplying a processing gas into the processing chamber; a first exhaust system which is connected to a first pump, and a second pump of a type different to the first pump, and which removes gas from the inside of the processing chamber; a second exhaust system which is connected to the second pump, and which removes gas from the inside of the processing chamber; and a control unit configured so as to control the first exhaust system and the second exhaust system such that, when the processing gas which has been supplied into the processing chamber is to be removed from the inside of the processing chamber, the second exhaust system is preliminarily used to remove to the gas from the inside of the processing chamber, and after the pressure inside the processing chamber reaches a prescribed pressure, the exhaust path is switched from the second exhaust system to the first exhaust system, and the first exhaust system is used to remove the gas from the inside of the processing chamber.