IMAGE SENSOR WITH DEEP WELL STRUCTURE AND FABRICATION METHOD THEREOF

摘要

An image sensor device includes a substrate having a first conductivity type. A plurality of photo-sensing regions including a first, a second, and a third photo-sensing regions corresponding to the R, G, B pixels are provided on the substrate. An insulation structure is disposed on the substrate to separate the photo-sensing regions from one another. A photodiode structure is formed within each photo-sensing region. A deep well structure having a second conductivity type. The deep well structure only overlaps with the second and third photo-sensing regions. The deep well structure does not overlap with the first photo-sensing region.

主权项

1. An image sensor device, comprising:
a semiconductor substrate having a first conductivity type, wherein a plurality of photo-sensing regions are provided on the semiconductor substrate; an insulation structure disposed on the semiconductor substrate to separate the photo-sensing regions from one another; a light-sensing structure is formed in the semiconductor substrate within each of the photo-sensing regions; and a deep well structure having a second conductivity type, wherein the deep well structure is disposed only under some of the photo-sensing regions.