发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT WAFER, SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To easily detect and identify an isolation region as a position to form a cut-off starting point part for isolating a state of a semiconductor light-emitting element wafer into individual semiconductor light-emitting elements even if relatively large ruggedness is adopted at a rear side of a board when improving light extraction efficiency of the semiconductor light-emitting elements.SOLUTION: The semiconductor light-emitting element wafer is formed from the board including a first face and a second face that is a face at an opposite side of the first face, and a semiconductor light-emitting element layer that is formed on the first face. In the semiconductor light-emitting element wafer, a plurality of semiconductor light-emitting element substrates are formed, and the semiconductor light-emitting element substrate includes the isolation region in a boundary part between the neighboring semiconductor light-emitting element substrates. On the second face of the board, a portion that is not corresponding to the isolation region becomes a coarse face part. A portion that corresponds to the isolation region is more flattened than the portion that does not correspond to the isolation region, and the cut-off starting point part is formed therein.SELECTED DRAWING: Figure 3
申请公布号 JP2016046461(A) 申请公布日期 2016.04.04
申请号 JP20140171472 申请日期 2014.08.26
申请人 TOYODA GOSEI CO LTD 发明人 MAKINO HIROAKI
分类号 H01L33/22;H01L21/301 主分类号 H01L33/22
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