SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER MANUFACTURING METHOD, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE AND INFORMATION PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser which can make it easy to control inclination of an end of an oxidized region in a current confinement layer.SOLUTION: A surface emitting semiconductor layer has an n-type lower DBR, an active region 104 and a p-type upper DBR 106 on a substrate. The upper DBR 106 includes in a bottom layer, a current confinement layer 108 adjacent to the active region 104. The current confinement layer 108 has a high-speed oxidation layer 108-1 composed of AlAs, a taper formation layer 108-2 formed just below the high-speed oxidation layer 108-1 and a composition gradient layer 108-3 formed on the high-speed oxidation layer 108-1. The maximum value of an Al content of the composition gradient layer 108-3 is smaller than an Al content of the high-speed oxidation layer 108-1.SELECTED DRAWING: Figure 2