| 发明名称 |
METHOD FOR GROWING NITRIDE-BASED SEMICONDUCTOR WITH HIGH QUALITY |
| 摘要 |
Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening. |
| 申请公布号 |
US2016093492(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514859898 |
申请日期 |
2015.09.21 |
| 申请人 |
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LEE Dong-Seon;SEO Dong-Ju;LEE Jun-Youb;KANG Chang-Mo;SEONG Won-Seok;PARK Mun-Do |
| 分类号 |
H01L21/02;H01L21/311;H01L21/033 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for growing a nitride-based semiconductor with high quality, the method comprising:
forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening. |
| 地址 |
Gwangju KR |
