发明名称 |
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE |
摘要 |
A semiconductor device capable of detecting a minute current with high accuracy is provided. The semiconductor device includes a first circuit, a second circuit, a first transistor, and a second transistor. A first analog signal is input to the first circuit via the first transistor. A second analog signal is input to the first circuit via the second transistor. The first analog signal includes a value of a first current. The second analog signal includes a value of a second current. The first circuit is capable of converting the first analog signal into a first digital signal. The second circuit is capable of generating a second digital signal based on the first digital signal. The first circuit is capable of converting the second analog signal into a third digital signal based on the second digital signal. The first or second transistor includes an oxide semiconductor in a channel. |
申请公布号 |
US2016093641(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201514862171 |
申请日期 |
2015.09.23 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
TAKAHASHI Kei |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device comprising:
a first circuit; a second circuit; a first transistor; and a second transistor, wherein a first analog signal is input to the first circuit via the first transistor, wherein a second analog signal is input to the first circuit via the second transistor, wherein the first analog signal includes a value of a first current, wherein the second analog signal includes a value of a second current, wherein the first circuit is configured to convert the first analog signal into a first digital signal, wherein the second circuit is configured to generate a second digital signal based on the first digital signal, wherein the first circuit is configured to convert the second analog signal into a third digital signal based on the second digital signal, and wherein at least one of the first transistor and the second transistor comprises an oxide semiconductor in a channel formation region. |
地址 |
Atsugi-shi JP |