发明名称 |
ULTRAVIOLET LIGHT EMITTING DIODE AND ULTRAVIOLET LASER DIODE |
摘要 |
An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200 DEG C, and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein. |
申请公布号 |
EP1258928(B1) |
申请公布日期 |
2016.03.30 |
申请号 |
EP20010946982 |
申请日期 |
2001.01.24 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;HOYA CORPORATION |
发明人 |
OTA, HIROMICHI;ORITA, MASAHIRO;HOSONO, HIDEO;KAWAMURA, KENICHI;SARUKURA, NOBUHIKO;HIRANO, MASAHIRO |
分类号 |
H01L33/26;H01L21/363;H01L33/00;H01L33/20;H01L33/28;H01L33/42;H01S5/042;H01S5/327 |
主分类号 |
H01L33/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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