Methods and apparatus for sensing a memory cell

摘要

Methods of operating a memory include selectively discharging a data line through a memory cell selected for sensing, discharging a sense node to the data line while a voltage level of the sense node is greater than a voltage level of the data line, and inhibiting discharging of the data line to the sense node while the voltage level of the data line is greater than the voltage level of the sense node. Sense circuits include a path between an input node and a sense node facilitating current flow from the sense node to the input node when a voltage level of the sense node is greater than a voltage level of the input node and inhibiting current flow from the input node to the sense node when the voltage level of the sense node is less than the voltage level of the input node.

主权项

1. A method of operating a memory, comprising:
precharging a data line to a first voltage level; precharging a sense node to a second voltage level; connecting the data line to a memory cell selected for sensing; selectively discharging the data line through the memory cell responsive to a voltage level applied to a control gate of the memory cell; connecting the sense node to the data line responsive to the data line discharging through the memory cell; and after connecting the sense node to the data line responsive to the data line discharging through the memory cell:
discharging the sense node to the data line while a voltage level of the sense node is greater than a voltage level of the data line; andinhibiting discharging of the data line to the sense node while the voltage level of the data line is greater than the voltage level of the sense node.