发明名称 Electroplating method and electroplating apparatus for through-hole
摘要 There is provided an electroplating method for a through-hole. The method includes: a first plating process, a second plating process, and a third plating process. The first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current, and the third plating process is a plating process of completely filling the through-hole with the metal film using the plating current whose value is equal to or larger than a forward-current value of the PR pulsed current used in the second plating process.
申请公布号 US9297088(B2) 申请公布日期 2016.03.29
申请号 US201313959811 申请日期 2013.08.06
申请人 Ebara Corporation 发明人 Shimoyama Masashi;Araki Yuji;Kuriyama Fumio;Fujikata Jumpei
分类号 C25D5/18;C25D5/02;C25D5/20;C25D17/18;C25D21/10;C25D21/12;H01L21/768;H01L21/288;C25D5/10;C25D17/00 主分类号 C25D5/18
代理机构 Baker & Hostetler LLP 代理人 Baker & Hostetler LLP
主权项 1. An electroplating method for a through-hole, the method comprising: immersing a substrate having a through-hole into a plating solution; and supplying a plating current between the substrate and anodes to perform a first plating process, a second plating process, and a third plating process successively, the anodes being arranged so as to face a front surface and a back surface of the substrate, wherein the first plating process is a plating process of forming a metal film with a uniform thickness in the through-hole to reduce a diameter of the through-hole, the plating current used in the first plating process being a PR pulsed current constituted by a forward current used in metal deposition and a reverse current used in metal dissolution which are generated alternately, the second plating process is a plating process of blocking up a central portion of the through-hole with the metal film using a PR pulsed current constituted by a forward current used in metal deposition and a reverse current used in metal dissolution which are generated alternately, a forward-current value of the PR pulsed current in the second plating process is smaller than a value of the forward current used in metal deposition in the first plating process, and the third plating process is a plating process of completely filling the through-hole with the metal film using a plating current whose value is larger than the forward-current value of the PR pulsed current used in the second plating process.
地址 Tokyo JP