| 摘要 |
A semiconductor device according to one embodiment of the present invention is provided with: a first normally-off transistor which comprises a first source, a first drain, a first gate and a first body diode; a second normally-off transistor which comprises a second source that is connected to the first source, a second drain, a second gate that is connected to the first gate and a second body diode; a normally-on transistor which comprises a third source that is connected to the first drain, a third drain and a third gate that is connected to the second drain; and a diode which comprises an anode that is connected to the second drain and a cathode that is connected to the third drain. |
