| 摘要 |
This invention relates to high-power semiconductor lasers and methods for manufacturing these lasers. A high-power semiconductor laser includes a support block, an anode metal plate, a cathode metal plate and a chip. The support block has a step, and the two ends of the support block have bosses, in which there are screw holes. The chip is welded to an insulation plate, which is attached to the support block. The anode metal plate and the cathode metal plate are, respectively, welded with an anode insulation plate and a cathode insulation plate, which are welded on the step of the support block. The cathode of the chip is connected with a metal connecting plate. The metal connecting plate is connected to the anode metal plate and the cathode metal plate. The insulation plate and the anode metal plate are bonded using a gold wire in press-welding. The present invention combines both C-mount and CT-mount technologies and has advantageous heat conducting and insulation properties. These lasers have high reliabilities because they are welded using hard soldering materials. The linear expansion coefficients of the chip and the insulation plate are matched. The insulation plate is thin. Therefore, the lasers have small volumes. |
