Semiconductor device and method for manufacturing semiconductor device

摘要

The structure includes a first blocking film over an insulating surface; a base insulating film over the insulating surface and the first blocking film; a first oxide semiconductor film over the base insulating film; a second oxide semiconductor film over the first oxide semiconductor film; source and drain electrodes in contact with side surfaces of the first and second oxide semiconductor films; a first insulating film over the source electrode; a second insulating film over the drain electrode; a third insulating film over the second oxide semiconductor film and the first and second insulating films; a third oxide semiconductor film over the third insulating film; a gate insulating film over the third oxide semiconductor film; and a gate electrode on and in contact with the gate insulating film and covering a top surface and side surfaces of the second oxide semiconductor film with the gate insulating film provided therebetween.

主权项

1. A semiconductor device comprising:
a first insulating film over an insulating surface; a second insulating film over the insulating surface and the first insulating film; a first oxide semiconductor film over the second insulating film; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode in contact with a first side surface of the first oxide semiconductor film and a first side surface of the second oxide semiconductor film; a drain electrode in contact with a second side surface of the first oxide semiconductor film and a second side surface of the second oxide semiconductor film; a third insulating film over the second oxide semiconductor film; a third oxide semiconductor film over the third insulating film; a gate insulating film over the third oxide semiconductor film; and a gate electrode over the gate insulating film, wherein the gate electrode covers a top surface and a third side surface of the second oxide semiconductor film.